- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 650pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 10A TO220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 550pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 550pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 5A | 0ns | 200µA @ 1200V | - | - | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 1220pF @ 1V, 100KHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 30A TO247-2 | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.75V @ 20A | 0ns | 200µA @ 1200V | - | 30A (DC) | 1220pF @ 1V, 100KHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 15A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 15A | - | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 936pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | - | 200µA @ 1200V | -55°C ~ 175°C | 10A (DC) | 612pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 8A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 8A | - | 200µA @ 1200V | -55°C ~ 175°C | 8A (DC) | 538pF @ 1V, 100kHz | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.5KV 10A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-263AB | Standard | 1500V | 1.35V @ 6.5A | 220ns | 250µA @ 1500V | -55°C ~ 150°C | 10A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.5KV 6.5A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-263AB | Standard | 1500V | 1.3V @ 6.5A | 350ns | 250µA @ 1500V | -55°C ~ 150°C | 6.5A | - | ||||
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Wolfspeed / Cree | E SERIES, 20 AMP, 1200V G4 SCHOT | TO-220-2 | Automotive, AEC-Q101, E | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 54.5A (DC) | 1500pF @ 0V, 1MHz |