- Manufacture :
- Series :
- Part Status :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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STMicroelectronics | DIODE GEN PURP 400V 30A DOP3I | DOP3I-2 Insulated (Straight Leads) | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DOP3I | Standard | 400V | 1.45V @ 30A | 100ns | 15µA @ 400V | -40°C ~ 175°C | 30A | - | ||||
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STMicroelectronics | DIODE GEN PURP 400V 30A DOP3I | DOP3I-2 Insulated (Straight Leads) | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DOP3I | Standard | 400V | 1.5V @ 30A | 100ns | 35µA @ 400V | -40°C ~ 150°C | 30A | - | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 650V 30A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.65V @ 10A | - | 100µA @ 650V | -55°C ~ 175°C | 30A (DC) | 527pF @ 1V, 1MHz | ||||
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STMicroelectronics | AUTOMOTIVE 650 V POWER SCHOTTKY | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | I2PAK | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | -40°C ~ 175°C | 10A | 480pF @ 0V, 1MHz |