- Manufacture :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Semtech Corporation | DIODE GP 25KV 500MA AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Standard | 25000V | 25V @ 1A | 5µs | 1µA @ 25000V | -55°C ~ 150°C | 500mA | - | ||||
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Semtech Corporation | DIODE GP 20KV 500MA AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Standard | 20000V | 20V @ 1A | 5µs | 1µA @ 20000V | -55°C ~ 150°C | 500mA | - | ||||
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Semtech Corporation | DIODE GEN PURP 5KV 500MA AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Standard | 5000V | 5V @ 1A | 5µs | 1µA @ 5000V | -55°C ~ 150°C | 500mA | - | ||||
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Semtech Corporation | DIODE GP 12.5KV 500MA AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Standard | 12500V | 13V @ 1A | 5µs | 1µA @ 12500V | -55°C ~ 150°C | 500mA | - | ||||
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Semtech Corporation | DIODE GP 10KV 500MA AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Standard | 10000V | 10V @ 1A | 5µs | 1µA @ 10000V | -55°C ~ 150°C | 500mA | - | ||||
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Semtech Corporation | DIODE GEN PURP 7.5KV 500MA AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Standard | 7500V | 8V @ 1A | 5µs | 1µA @ 7500V | -55°C ~ 150°C | 500mA | - | ||||
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Semtech Corporation | DIODE GEN PURP 5KV 500MA AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Standard | 5000V | 5V @ 1A | 5µs | 1µA @ 5000V | -55°C ~ 150°C | 500mA | - | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz |