- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
20 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 400V 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 400V | 1.5V @ 10A | 25ns | 100µA @ 400V | -40°C ~ 150°C | 10A | - | |||||
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Semtech Corporation | DIODE GEN PURP 150V 3.3A AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 150V | 875mV @ 1A | 25ns | 1µA @ 150V | -65°C ~ 175°C | 3.3A | 25pF @ 5V, 1MHz | |||||
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Semtech Corporation | DIODE GEN PURP 150V 2.5A AXIAL | Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 150V | 875mV @ 1A | 25ns | 1µA @ 150V | -65°C ~ 175°C | 2.5A | 25pF @ 5V, 1MHz | ||||||
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ROHM Semiconductor | DIODE GEN PURP 600V 5A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.8V @ 5A | 25ns | 10µA @ 600V | 150°C (Max) | 5A | - | |||||
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ROHM Semiconductor | DIODE GEN PURP 600V 10A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.8V @ 10A | 25ns | 10µA @ 600V | 150°C (Max) | 10A | - | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220F | TO-220-2 Full Pack | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 2.6V @ 4A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 600V | 2.6V @ 4A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 3.6V @ 8A | 25ns | 10µA @ 600V | -65°C ~ 150°C | 8A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220F-2L | Standard | 600V | 3.4V @ 8A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 8A | - | |||||
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Sanken | DIODE GEN PURP 400V 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 400V | 1.5V @ 10A | 25ns | 100µA @ 400V | -40°C ~ 150°C | 10A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220F | TO-220-2 Full Pack | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 2.6V @ 4A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 600V | 2.6V @ 4A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | FRED Pt® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 2.4V @ 8A | 25ns | 50µA @ 600V | -65°C ~ 175°C | 8A | - |