- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
-
- - (338)
- 1.05V @ 15A (2)
- 1.17V @ 80A (2)
- 1.1V @ 10A (2)
- 1.1V @ 20A (2)
- 1.1V @ 60A (2)
- 1.1V @ 8A (4)
- 1.3V @ 8A (2)
- 1.41V @ 30A (4)
- 1.4V @ 40A (2)
- 1.4V @ 60A (4)
- 1.6V @ 10A (18)
- 1.6V @ 15A (4)
- 1.6V @ 2.5A (14)
- 1.6V @ 20A (4)
- 1.6V @ 5A (4)
- 1.74V @ 750mA (14)
- 1.75V @ 10A (4)
- 1.75V @ 15A (2)
- 1.75V @ 20A (6)
- 1.75V @ 5A (4)
- 1.75V @ 8A (2)
- 1.7V @ 8A (2)
- 1.8V @ 10A (22)
- 1.8V @ 20A (2)
- 1.8V @ 2A (28)
- 1.8V @ 50A (12)
- 1.8V @ 5A (2)
- 1.8V @ 8A (4)
- 2.15V @ 4A (2)
- 2.1V @ 15A (2)
- 2.1V @ 30A (4)
- 2.2V @ 15A (2)
- 2.2V @ 5A (6)
- 2V @ 10A (14)
- 3.2V @ 15A (6)
- 3.2V @ 30A (6)
- 3.2V @ 75A (2)
- 3.2V @ 8A (4)
- 3.3V @ 18A (6)
- 3.3V @ 30A (2)
- 3.3V @ 8A (8)
- 3.5V @ 10A (4)
- 3.5V @ 15A (4)
- 3.5V @ 5A (4)
- 3V @ 16A (4)
- 3V @ 6A (2)
- 3V @ 8A (2)
- 4.1V @ 30A (2)
- 4V @ 3A (2)
- 950mV @ 30A (2)
- Current - Reverse Leakage @ Vr :
-
- 100µA @ 1000V (2)
- 100µA @ 1200V (54)
- 100µA @ 650V (2)
- 10µA @ 1200V (38)
- 10µA @ 600V (2)
- 15µA @ 1200V (6)
- 1mA @ 100V (2)
- 1mA @ 1200V (12)
- 200µA @ 1200V (20)
- 20µA @ 1200V (24)
- 250µA @ 1200V (28)
- 300µA @ 1200V (4)
- 400µA @ 1200V (8)
- 40µA @ 1200V (16)
- 500µA @ 1200V (2)
- 50µA @ 1200V (34)
- 50µA @ 600V (6)
- 5µA @ 1200V (6)
- Current - Average Rectified (Io) :
-
- 10A (42)
- 10A (DC) (10)
- 11.2A (DC) (2)
- 15A (16)
- 15A (DC) (6)
- 16A (4)
- 18A (6)
- 20A (6)
- 20A (DC) (4)
- 24.5A (DC) (2)
- 24A (DC) (2)
- 2A (14)
- 30A (20)
- 30A (DC) (2)
- 31.5A (DC) (2)
- 3A (2)
- 40A (2)
- 50A (12)
- 54.5A (DC) (2)
- 5A (24)
- 5A (DC) (8)
- 60A (6)
- 6A (2)
- 750mA (14)
- 75A (2)
- 80A (2)
- 8A (22)
- 8A (DC) (16)
- 9.4A (DC) (14)
- Capacitance @ Vr, F :
-
- 1060pF @ 1V, 1MHz (4)
- 1220pF @ 1V, 100KHz (4)
- 1300pF @ 1V, 1MHz (2)
- 138pF @ 1V, 1MHz (14)
- 1500pF @ 0V, 1MHz (2)
- 237pF @ 1V, 1MHz (14)
- 260pF @ 1V, 1MHz (14)
- 270pF @ 1V, 1MHz (4)
- 2940pF @ 1V, 1MHz (12)
- 30pF @ 10V, 1MHz (4)
- 317pF @ 1V, 1MHz (2)
- 325pF @ 1V, 1MHz (2)
- 41pF @ 600V, 1MHz (2)
- 454pF @ 1V, 1MHz (2)
- 477pF @ 1V, 1MHz (2)
- 480pF @ 0V, 1MHz (2)
- 508pF @ 1V, 1MHz (2)
- 520pF @ 1V, 1MHz (28)
- 538pF @ 1V, 100kHz (2)
- 550pF @ 1V, 1MHz (4)
- 612pF @ 1V, 100kHz (2)
- 635pF @ 1V, 1MHz (4)
- 650pF @ 1V, 1MHz (2)
- 66pF @ 1V, 1MHz (14)
- 754pF @ 0V, 1MHz (2)
- 790pF @ 1V, 1MHz (4)
- 884pF @ 1V, 1MHz (14)
- 936pF @ 1V, 100kHz (2)
134 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Sanken | DIODE GEN PURP 1.2KV 3A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 1200V | 4V @ 3A | 70ns | 500µA @ 1200V | -40°C ~ 150°C | 3A | - | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 1200V | 1.75V @ 20A | 0ns | 400µA @ 1200V | 175°C (Max) | 20A | 1300pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 650pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 1200V | 1.75V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 325pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 20A TO220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 20A | 0ns | 400µA @ 1200V | 175°C (Max) | 20A (DC) | 1060pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 15A TO220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 15A | 0ns | 300µA @ 1200V | 175°C (Max) | 15A (DC) | 790pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 10A TO220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 550pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 5A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 270pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 15A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 15A | 0ns | 300µA @ 1200V | 175°C (Max) | 15A (DC) | 790pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 20A | 0ns | 400µA @ 1200V | 175°C (Max) | 20A (DC) | 1060pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 10A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 1200V | - | 0ns | - | 175°C (Max) | 10A (DC) | - | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 550pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 270pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz |