- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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3,435
In-stock
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 400µA @ 1200V | -55°C ~ 175°C | 10A | 41pF @ 600V, 1MHz | |||
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ON Semiconductor | DIODE GEN PURP 1.5KV 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 1500V | 1.8V @ 10A | 150ns | 15µA @ 1500V | -65°C ~ 150°C | 10A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 100V 30A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | I2PAK (TO-262) | Schottky | 100V | 950mV @ 30A | - | 1mA @ 100V | -40°C ~ 150°C | 30A | - | ||||
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WeEn Semiconductors | DIODE GEN PURP 600V 10A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 1.8V @ 10A | 19ns | - | 150°C (Max) | 10A | - | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 16.5A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Obsolete | TO-263-2 | Silicon Carbide Schottky | 600V | 1.8V @ 10A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 16.5A | 550pF @ 0V, 1MHz | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 16.5A TO220 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 600V | 1.8V @ 10A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 16.5A | 550pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 1.5KV 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 1500V | 1.8V @ 10A | 150ns | 15µA @ 1500V | -65°C ~ 150°C | 10A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | FRED Pt® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-262 | Standard | 600V | 3.2V @ 15A | 32ns | 50µA @ 600V | -65°C ~ 175°C | 15A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | FRED Pt® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-262 | Standard | 600V | 3V @ 8A | 24ns | 50µA @ 600V | -65°C ~ 175°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | FRED Pt® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-262 | Standard | 600V | 1.05V @ 15A | 270ns | 10µA @ 600V | -65°C ~ 175°C | 15A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | FRED Pt® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-262 | Standard | 600V | 2.2V @ 15A | 35ns | 50µA @ 600V | -65°C ~ 175°C | 15A | - | ||||
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Wolfspeed / Cree | ZRECTM 10A 1200V SIC SCHOTTKY DI | TO-247-2 | Z-Rec® | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 31.5A (DC) | 754pF @ 0V, 1MHz | ||||
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STMicroelectronics | AUTOMOTIVE 650 V POWER SCHOTTKY | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | I2PAK | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | -40°C ~ 175°C | 10A | 480pF @ 0V, 1MHz | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 175°C | 10A | 635pF @ 1V, 1MHz | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO247-2 | TO-247-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 175°C | 10A | 635pF @ 1V, 1MHz |