- Manufacture :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
|
|
Microsemi Corporation | DIODE SCHOTTKY 20V 75MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Active | DO-35 (DO-204AH) | Schottky | 20V | 1V @ 35mA | - | 150nA @ 16V | -65°C ~ 150°C | 75mA | 2pF @ 0V, 1MHz |