- Package / Case :
- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 300V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 300V | 1.25V @ 1A | 75ns | 5µA @ 300V | -65°C ~ 175°C | 1A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 160A TO249AA | TO-249AA | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Screw Mount | Obsolete | TO-249AA | Schottky | 45V | 860mV @ 160A | - | 5mA @ 45V | - | 160A | 2600pF @ 5V, 1MHz |