- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GEN PURP 200V 200MA SOT23 | TO-236-3, SC-59, SOT-23-3 | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Surface Mount | Active | SOT-23 | Standard | 200V | 1.25V @ 200mA | 50ns | 100nA @ 200V | -65°C ~ 150°C | 200mA | 5pF @ 0V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GEN PURP 250V 200MA SOD123 | SOD-123 | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SOD-123 | Standard | 250V | 1V @ 100mA | 50ns | 100nA @ 200V | -65°C ~ 150°C | 200mA | 1.5pF @ 0V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 200V 200MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | DO-35 | Standard | 200V | 1.25V @ 200mA | 50ns | 100nA @ 200V | 175°C (Max) | 200mA | 5pF @ 0V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 250V 200MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | DO-35 | Standard | 250V | 1.25V @ 200mA | 50ns | 100nA @ 200V | 175°C (Max) | 200mA | 5pF @ 0V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 200V 200MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | DO-35 | Standard | 200V | 1.25V @ 200mA | 50ns | 100nA @ 200V | 175°C (Max) | 200mA | 5pF @ 0V, 1MHz |