- Package / Case :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
23 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Semtech Corporation | DIODE GEN PURP 1KV 5A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 1000V | 1V @ 3A | 2µs | 1µA @ 2000V | - | 5A | 92pF @ 5V, 1MHz | |||||
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Semtech Corporation | DIODE GEN PURP 800V 5A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 800V | 1V @ 3A | 2µs | 1µA @ 800V | - | 5A | 92pF @ 5V, 1MHz | |||||
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Semtech Corporation | DIODE GEN PURP 600V 5A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 600V | 1V @ 3A | 2µs | 1µA @ 600V | - | 5A | 92pF @ 5V, 1MHz | |||||
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Semtech Corporation | DIODE GEN PURP 400V 5A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 400V | 1V @ 3A | 2µs | 1µA @ 400V | - | 5A | 92pF @ 5V, 1MHz | |||||
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Semtech Corporation | DIODE GEN PURP 200V 5A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 200V | 1V @ 3A | 2µs | 1µA @ 200V | - | 5A | 92pF @ 5V, 1MHz | |||||
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Semtech Corporation | DIODE GEN PURP 2KV 2A AXIAL | Axial | Automotive, AEC-Q101 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 2000V | 2V @ 2A | 2µs | 1µA @ 2000V | -65°C ~ 150°C | 2A | - | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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ON Semiconductor | 650V 30A SIC SBD GEN1.5 | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | 1.7V @ 30A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 37A (DC) | 1260pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE GEN PURP 1KV 80A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1000V | 1.9V @ 80A | 200ns | 250µA @ 80V | -65°C ~ 175°C | 80A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 30A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 1.5V @ 30A | 80ns | 250µA @ 600V | -55°C ~ 175°C | 30A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 80A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 1.6V @ 80A | 90ns | 250µA @ 600V | -55°C ~ 175°C | 80A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 50A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 1.6V @ 50A | 90ns | 250µA @ 600V | -55°C ~ 175°C | 50A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 50A TO247 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 2.1V @ 50A | 60ns | 250µA @ 600V | -55°C ~ 175°C | 50A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 15A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 2.3V @ 15A | 55ns | 100µA @ 1000V | -55°C ~ 175°C | 15A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 30A TO247-2 | TO-247-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 2.1V @ 30A | 45ns | 250µA @ 600V | -55°C ~ 175°C | 30A | - | |||||
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ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 30A (DC) | 1220pF @ 1V, 100KHz | |||||
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ON Semiconductor | 1200V 10A AUTO SIC SBD | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 17A (DC) | 612pF @ 1V, 100kHz |