- Manufacture :
- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
|
ON Semiconductor | DIODE GEN PURP 520V 5A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | |||||
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ON Semiconductor | DIODE GEN PURP 520V 5A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 520V | 1.15V @ 5A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 5A | - | |||||
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ON Semiconductor | DIODE GEN PURP 520V 4A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 520V | 1.15V @ 4A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 4A | - | |||||
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ON Semiconductor | DIODE GEN PURP 520V 4A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 520V | 1.15V @ 4A | 95ns | 5µA @ 520V | -65°C ~ 175°C | 4A | - |