- Manufacture :
- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 50V 200MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | DO-35 | Standard | 50V | 1V @ 200mA | 6ns | 100nA @ 50V | 175°C (Max) | 200mA | 2.5pF @ 0V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 125V 200MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Active | DO-35 | Standard | 125V | 1.2V @ 300mA | 60ns | 50nA @ 100V | 175°C (Max) | 200mA | 2.5pF @ 0V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 80V 200MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Active | DO-35 | Standard | 80V | 900mV @ 100mA | 4ns | 100nA @ 55V | 175°C (Max) | 200mA | 2.5pF @ 0V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 50V 200MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | DO-35 | Standard | 50V | 1V @ 200mA | 6ns | 100nA @ 50V | 175°C (Max) | 200mA | 2.5pF @ 0V, 1MHz |