- Manufacture :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken | DIODE GEN PURP 600V 1A AXIAL | Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 600V | 2V @ 1A | 100ns | 500µA @ 600V | -40°C ~ 150°C | 1A | - | ||||||
|
Sanken | DIODE GEN PURP 600V 1A AXIAL | Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 600V | 2V @ 1A | 100ns | 500µA @ 600V | -40°C ~ 150°C | 1A | - | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | ||||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | ||||||
|
ON Semiconductor | DIODE GEN PURP 500V 3A DO201AD | DO-201AD, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 500V | 1.2V @ 3A | - | 5µA @ 500V | -55°C ~ 150°C | 3A | 30pF @ 4V, 1MHz | ||||||
|
ON Semiconductor | DIODE GEN PURP 500V 1.5A DO15 | DO-204AC, DO-15, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-15 | Standard | 500V | 1.4V @ 1.5A | - | 5µA @ 500V | -55°C ~ 150°C | 1.5A | 25pF @ 4V, 1MHz | ||||||
|
ON Semiconductor | DIODE GEN PURP 500V 1A SMA | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMA (DO-214AC) | Standard | 500V | 1.7V @ 1A | 35ns | 5µA @ 500V | 150°C (Max) | 1A | - | ||||||
|
ON Semiconductor | DIODE GEN PURP 500V 1.5A DO15 | DO-204AC, DO-15, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-15 | Standard | 500V | 1.4V @ 1.5A | - | 5µA @ 500V | -55°C ~ 150°C | 1.5A | 25pF @ 4V, 1MHz |