- Manufacture :
- Package / Case :
- Mounting Type :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Semtech Corporation | DIODE GEN PURP 400V 2A AXIAL | Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 400V | 1.2V @ 1A | 150ns | 500nA @ 400V | -65°C ~ 175°C | 2A | 27pF @ 5V, 1MHz | |||||
|
|
|
Semtech Corporation | DIODE GEN PURP 400V 1A AXIAL | Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Avalanche | 400V | 1.1V @ 1A | 2µs | 500nA @ 400V | -65°C ~ 175°C | 2A | 23pF @ 5V, 1MHz | |||||
|
|
ON Semiconductor | 650V 10A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 18A (DC) | 575pF @ 1V, 100kHz |