- Manufacture :
- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Sanken | DIODE GEN PURP 800V 1.2A AXIAL | Axial | - | Tape & Box (TB) | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 800V | 920mV @ 1.2A | 18µs | 10µA @ 800V | -40°C ~ 150°C | 1.2A | - | ||||
|
|
|
Sanken | DIODE GEN PURP 800V 1.2A AXIAL | Axial | - | Tape & Box (TB) | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 800V | 920mV @ 1.5A | 18µs | 10µA @ 800V | -40°C ~ 150°C | 1.2A | - | ||||
|
|
|
Sanken | DIODE GEN PURP 800V 1.2A AXIAL | Axial | - | Tape & Box (TB) | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 800V | 920mV @ 1.2A | 18µs | 10µA @ 800V | -40°C ~ 150°C | 1.2A | - | ||||
|
|
Sanken | DIODE GEN PURP 800V 1.2A AXIAL | Axial, Radial Bend | - | Tape & Box (TB) | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 800V | 920mV @ 1.2A | 18µs | 10µA @ 800V | -40°C ~ 150°C | 1.2A | - | ||||
|
|
SMC Diode Solutions | DIODE SCHOTTKY 30V 2A DO15 | DO-204AL, DO-41, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-41 | Schottky | 30V | 500mV @ 2A | - | 500µA @ 30V | -65°C ~ 150°C | 2A | 170pF @ 4V, 1MHz | ||||
|
|
|
SMC Diode Solutions | DIODE SCHOTTKY 30V 2A DO15 | DO-204AL, DO-41, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-41 | Schottky | 30V | 500mV @ 2A | - | 500µA @ 30V | -65°C ~ 150°C | 2A | 170pF @ 4V, 1MHz |