- Package / Case :
- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 2.4A TO277A | TO-277, 3-PowerDFN | Automotive, AEC-Q101 | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Discontinued at Digi-Key | TO-277A (SMPC) | Standard | 200V | 1.05V @ 2A | 2.2µs | 10µA @ 200V | -55°C ~ 175°C | 2.4A (DC) | 28pF @ 4V, 1MHz | |||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 5A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Discontinued at Digi-Key | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 5A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 317pF @ 1V, 1MHz |