- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | DO-204AH, DO-35, Axial | - | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | DO-35 | Standard | 100V | 1V @ 10mA | 4ns | 5µA @ 75V | -55°C ~ 175°C | 200mA | 4pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | DO-204AH, DO-35, Axial | - | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | DO-35 | Standard | 100V | 1V @ 10mA | 4ns | 5µA @ 75V | -55°C ~ 175°C | 200mA | 4pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | DO-204AH, DO-35, Axial | - | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | DO-35 | Standard | 100V | 1V @ 10mA | 4ns | 5µA @ 75V | -55°C ~ 175°C | 200mA | 4pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | DO-204AH, DO-35, Axial | - | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | DO-35 | Standard | 100V | 1V @ 10mA | 4ns | 5µA @ 75V | -55°C ~ 175°C | 200mA | 4pF @ 0V, 1MHz | ||||
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ON Semiconductor | 650V 6A SIC SBD | TO-220-2 Full Pack | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 6A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 6A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE GEN PURP 100V 200MA SOD80 | DO-213AC, MINI-MELF, SOD-80 | Small Signal =< 200mA (Io), Any Speed | Surface Mount | Active | SOD-80 | Standard | 100V | 1V @ 10mA | 4ns | 25nA @ 20V | -55°C ~ 175°C | 200mA | 4pF @ 0V, 1MHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz |