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Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Current - Reverse Leakage @ Vr :
Operating Temperature - Junction :
Current - Average Rectified (Io) :
Capacitance @ Vr, F :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
BA6814
Per Unit
$2.5256
RFQ
ROHM Semiconductor DIODE SCHOTTKY 650V 6A TO263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101 No Recovery Time > 500mA (Io) Surface Mount Active TO-263AB Silicon Carbide Schottky 650V 1.55V @ 6A 0ns 120µA @ 600V 175°C (Max) 6A (DC) 219pF @ 1V, 1MHz
BA6227-H
Per Unit
$1.7248
RFQ
ROHM Semiconductor DIODE SCHOTTKY 650V 6A TO263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - No Recovery Time > 500mA (Io) Surface Mount Active TO-263AB Silicon Carbide Schottky 650V 1.55V @ 6A 0ns 120µA @ 600V 175°C (Max) 6A (DC) 219pF @ 1V, 1MHz
FDC6432SH-NL
RFQ
ON Semiconductor DIODE GEN PURP 600V 4A TO263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Stealth™ Fast Recovery =< 500ns, > 200mA (Io) Surface Mount Obsolete TO-263AB Standard 600V 2.4V @ 4A 22ns 100µA @ 600V -55°C ~ 175°C 4A -
ISL9R460S3ST
RFQ
ON Semiconductor DIODE GEN PURP 600V 4A TO263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Stealth™ Fast Recovery =< 500ns, > 200mA (Io) Surface Mount Obsolete TO-263AB Standard 600V 2.4V @ 4A 22ns 100µA @ 600V -55°C ~ 175°C 4A -
SCS206AJHRTLL
Per Unit
$2.5256
RFQ
ROHM Semiconductor DIODE SCHOTTKY 650V 6A TO263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101 No Recovery Time > 500mA (Io) Surface Mount Active TO-263AB Silicon Carbide Schottky 650V 1.55V @ 6A 0ns 120µA @ 600V 175°C (Max) 6A (DC) 219pF @ 1V, 1MHz
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