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1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE GEN PURP 600V 20A LPDS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | LPDS | Standard | 600V | 1.55V @ 20A | 60ns | 10µA @ 600V | 150°C (Max) | 20A | - | |||||
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ROHM Semiconductor | DIODE GEN PURP 600V 20A TO220NFM | TO-220-2 | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 1.55V @ 20A | 60ns | 10µA @ 600V | 150°C (Max) | 20A | - | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 730pF @ 1V, 1MHz | |||||
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4,485
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ROHM Semiconductor | FAST RECOVERY DIODES (CORRESPOND | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | LPDS | Standard | 600V | 1.55V @ 20A | 60ns | 10µA @ 600V | 150°C (Max) | 20A | 322pF @ 0V, 1MHz | ||||
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ROHM Semiconductor | FAST RECOVERY DIODE (AEC-Q101 QU | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | LPDS | Standard | 430V | 1.55V @ 20A | 30ns | 10µA @ 430V | 150°C (Max) | 20A | 268pF @ 0V, 1MHz | |||||
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ROHM Semiconductor | DIODE GEN PURP 600V 20A TO220 | TO-220-2 Full Pack | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220ACFP | Standard | 600V | 1.55V @ 20A | 140ns | 10µA @ 600V | 150°C (Max) | 20A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 20A TO220NFM | TO-220-2 | Automotive, AEC-Q101 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 1.55V @ 20A | 60ns | 10µA @ 600V | 150°C (Max) | 20A | - | ||||
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ROHM Semiconductor | DIODE SILICON 650V 20A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 730pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO220FM | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FM | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 730pF @ 1V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 150V DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DPAK | Schottky | 150V | 1.55V @ 20A | - | 200µA @ 150V | -55°C ~ 150°C | - | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz |