- Manufacture :
-
- Diodes Incorporated (4)
- GeneSiC Semiconductor (7)
- IXYS (1)
- ON Semiconductor (13)
- ROHM Semiconductor (4)
- STMicroelectronics (3)
- WeEn Semiconductors (1)
- Wolfspeed / Cree (1)
- Central Semiconductor Corp (1)
- Vishay Semiconductor Diodes Division (6)
- SMC Diode Solutions (10)
- Global Power Technologies Group (1)
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
-
- 100µA @ 100V (2)
- 100µA @ 1200V (4)
- 100µA @ 35V (4)
- 100µA @ 40V (2)
- 100µA @ 45V (2)
- 100µA @ 50V (2)
- 100µA @ 600V (4)
- 100µA @ 60V (2)
- 100µA @ 650V (4)
- 100µA @ 80V (6)
- 100µA @ 90V (6)
- 10µA @ 200V (2)
- 10µA @ 400V (2)
- 10µA @ 600V (6)
- 130µA @ 650V (2)
- 1mA @ 40V (4)
- 1mA @ 45V (2)
- 1mA @ 60V (2)
- 2.7mA @ 35V (6)
- 2.7mA @ 40V (6)
- 200µA @ 600V (4)
- 20µA @ 1200V (2)
- 400µA @ 1200V (2)
- 40µA @ 1200V (14)
- 50µA @ 800V (2)
- 60µA @ 300V (2)
- 6mA @ 35V (2)
- 6mA @ 40V (2)
- 6mA @ 45V (2)
- Operating Temperature - Junction :
52 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE GEN PURP 600V 10A TO220NFM | TO-220-2 | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.8V @ 10A | 25ns | 10µA @ 600V | 150°C (Max) | 10A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 10A TO220NFM | TO-220-2 | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 1.55V @ 10A | 50ns | 10µA @ 600V | 150°C (Max) | 10A | - | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 600V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 600V | 1.7V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A | 430pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE GP 600V 10A TO220ACFP | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220ACFP | Standard | 600V | 1.3V @ 10A | 150ns | 10µA @ 600V | 150°C (Max) | 10A | - | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 40V 20A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Schottky | 40V | 570mV @ 20A | - | 2.7mA @ 40V | -55°C ~ 150°C | 20A | 1400pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 35V 20A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Schottky | 35V | 570mV @ 20A | - | 2.7mA @ 35V | -55°C ~ 150°C | 20A | 1400pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 100µA @ 650V | -55°C ~ 175°C | 10A | 695pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 40V 20A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Schottky | 40V | 570mV @ 20A | - | 2.7mA @ 40V | -55°C ~ 150°C | 20A | 1400pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 35V 20A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Schottky | 35V | 570mV @ 20A | - | 2.7mA @ 35V | -55°C ~ 150°C | 20A | 1400pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 100µA @ 650V | -55°C ~ 175°C | 10A | 695pF @ 0V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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3,435
In-stock
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 400µA @ 1200V | -55°C ~ 175°C | 10A | 41pF @ 600V, 1MHz | |||
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ON Semiconductor | DIODE SCHOTTKY 35V 10A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2 | Schottky | 35V | 840mV @ 20A | - | 100µA @ 35V | -65°C ~ 175°C | 10A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 80V 10A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2 | Schottky | 80V | 800mV @ 10A | - | 100µA @ 80V | -65°C ~ 175°C | 10A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 90V 10A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2 | Schottky | 90V | 800mV @ 10A | - | 100µA @ 90V | -65°C ~ 175°C | 10A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 50V 10A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Schottky | 50V | 800mV @ 10A | - | 100µA @ 50V | -65°C ~ 150°C | 10A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 10A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 600V | 1.3V @ 10A | 150ns | 100µA @ 600V | 150°C (Max) | 10A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 35V 10A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Schottky | 35V | 840mV @ 20A | - | 100µA @ 35V | -65°C ~ 175°C | 10A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 80V 10A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Schottky | 80V | 800mV @ 10A | - | 100µA @ 80V | -65°C ~ 175°C | 10A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 90V 10A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Schottky | 90V | 800mV @ 10A | - | 100µA @ 90V | -65°C ~ 175°C | 10A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 60V 10A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Schottky | 60V | 800mV @ 10A | - | 100µA @ 60V | -65°C ~ 175°C | 10A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 45V 10A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Schottky | 45V | 840mV @ 20A | - | 100µA @ 45V | -65°C ~ 175°C | 10A | - |