- Manufacture :
- Package / Case :
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0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE SCHOTTKY 600V 10A TO220F | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220F-2L | Silicon Carbide Schottky | 600V | 1.5V @ 10A | 0ns | 15µA @ 600V | -40°C ~ 175°C | 10A | - | ||||
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Sanken | DIODE GEN PURP 400V 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 400V | 1.5V @ 10A | 25ns | 100µA @ 400V | -40°C ~ 150°C | 10A | - | ||||
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Sanken | DIODE GEN PURP 600V 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 1.5V @ 10A | 30ns | 100µA @ 600V | -40°C ~ 150°C | 10A | - | ||||
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Sanken | DIODE SCHOTTKY 600V 20A TO220-2 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220F | Silicon Carbide Schottky | 600V | 1.5V @ 10A | 0ns | 15mA @ 600V | -40°C ~ 175°C | 20A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 350V 10A CPD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | CPD | Standard | 350V | 1.5V @ 10A | 30ns | 10µA @ 350V | 150°C (Max) | 10A | - | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | SUPER FAST RECOVERY DIODE (CORRE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252 | Standard | 350V | 1.5V @ 10A | 30ns | 10µA @ 350V | 150°C (Max) | 10A | - | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FM | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE GEN PURP 350V 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252 | Standard | 350V | 1.5V @ 10A | 30ns | 10µA @ 350V | 150°C (Max) | 10A | - | |||||
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ROHM Semiconductor | DIODE SC SCHKY 650V 10A TO220ACP | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | ||||
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SMC Diode Solutions | DIODE GEN PURP 400V DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DPAK | Standard | 400V | 1.5V @ 10A | 45ns | 10µA @ 400V | -55°C ~ 150°C | - | - | |||||
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Sanken | DIODE GEN PURP 400V 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 400V | 1.5V @ 10A | 25ns | 100µA @ 400V | -40°C ~ 150°C | 10A | - | ||||
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Sanken | DIODE GEN PURP 600V 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 1.5V @ 10A | 30ns | 100µA @ 600V | -40°C ~ 150°C | 10A | - | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz |