- Package / Case :
- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | TO-220-2 Full Pack | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FP | Silicon Carbide Schottky | 3300V | 1.7V @ 300mA | 0ns | 5µA @ 3300V | -55°C ~ 175°C | 300mA | 42pF @ 1V, 1MHz | ||||
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ON Semiconductor | 650V 8A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 6A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 6A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 60V 2A POWERMITE | DO-216AA | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Powermite | Schottky | 60V | 650mV @ 2A | - | 12µA @ 60V | -55°C ~ 175°C | 2A | - | |||||
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ON Semiconductor | DIODE SCHOTTKY 60V 2A POWERMITE | DO-216AA | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Powermite | Schottky | 60V | 650mV @ 2A | - | 12µA @ 60V | -55°C ~ 175°C | 2A | - | |||||
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ON Semiconductor | 650V 20A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 20A (DC) | 1085pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 10A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 10A (DC) | 575pF @ 1V, 100kHz | ||||
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Infineon Technologies | DIODE GEN PURP 600V 21A TO22FP | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | PG-TO220-2 Full Pack | Standard | 600V | 2.05V @ 30A | 130ns | 40µA @ 600V | -55°C ~ 175°C | 21A | - |