- Manufacture :
- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 600V 2A SJP | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 600V | 1.5V @ 2A | 30ns | 10µA @ 600V | -40°C ~ 150°C | 2A | - | |||||
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Sanken | DIODE GEN PURP 600V 2A SJP | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 600V | 1.5V @ 2A | 30ns | 10µA @ 600V | -40°C ~ 150°C | 2A | - | |||||
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Sanken | DIODE GEN PURP 600V 2A 2SMD | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 600V | 1.5V @ 2A | 30ns | 10µA @ 600V | -40°C ~ 150°C | 2A | - | |||||
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Sanken | DIODE GEN PURP 600V 2A SJP | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 600V | 1.5V @ 2A | 50ns | 50µA @ 600V | -40°C ~ 150°C | 2A | - | |||||
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Sanken | DIODE GEN PURP 600V 2A SJP | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 600V | 1.5V @ 2A | 50ns | 50µA @ 600V | -40°C ~ 150°C | 2A | - | |||||
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Sanken | DIODE GEN PURP 600V 2A 2SMD | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 600V | 1.5V @ 2A | - | 50µA @ 600V | -40°C ~ 150°C | 2A | - | |||||
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Sanken | DIODE GEN PURP 600V 2A SJP | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 600V | 1.5V @ 2A | 50ns | 50µA @ 600V | -40°C ~ 150°C | 2A | - | |||||
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Sanken | DIODE GEN PURP 600V 2A SJP | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 600V | 1.5V @ 2A | 30ns | 10µA @ 600V | -40°C ~ 150°C | 2A | - | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 2A | 0ns | 10.8µA @ 650V | 175°C (Max) | 2.15A (DC) | 110pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 2A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 2A | 0ns | 10.8µA @ 650V | 175°C (Max) | 2A (DC) | 110pF @ 1V, 1MHz | ||||
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Diodes Incorporated | DIODE GEN PURP 600V 2A DO15 | DO-204AC, DO-15, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-15 | Standard | 600V | 1.5V @ 2A | 50ns | 10µA @ 600V | -65°C ~ 150°C | 2A | 50pF @ 4V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 2A | 0ns | 10.8µA @ 650V | 175°C (Max) | 2.15A (DC) | 110pF @ 1V, 1MHz | ||||
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Sanken | DIODE GEN PURP 600V 2A SJP | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 600V | 1.5V @ 2A | 30ns | 10µA @ 600V | -40°C ~ 150°C | 2A | - |