- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Central Semiconductor Corp | DIODE GEN PURP 800V 1A DO41 | DO-204AL, DO-41, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 800V | 1.7V @ 1A | 75ns | 10µA @ 600V | -65°C ~ 150°C | 1A | 10pF @ 4V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GEN PURP 1000V 1A DO41 | DO-204AL, DO-41, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 1000V | 1.7V @ 1A | 75ns | 10µA @ 600V | -65°C ~ 150°C | 1A | 10pF @ 4V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GEN PURP 600V 1A DO41 | DO-204AL, DO-41, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 600V | 1.7V @ 1A | 75ns | 10µA @ 600V | -65°C ~ 150°C | 1A | 10pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 600V 1A DO41 | DO-204AL, DO-41, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 600V | 1.7V @ 1A | 75ns | 5µA @ 600V | -65°C ~ 150°C | 1A | - | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A SMA-FL | DO-221AC, SMA Flat Leads | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | SMA-FL | Standard | 600V | 1.7V @ 1A | 35ns | 5µA @ 600V | -55°C ~ 150°C | 1A | 9pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | TO-277, 3-PowerDFN | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-277A (SMPC) | Schottky | 100V | 880mV @ 10A | - | 10µA @ 100V | -55°C ~ 175°C | 10A | 270pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO214AC | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-214AC (SMA) | Standard | 600V | 1.7V @ 1A | 75ns | 10µA @ 600V | -55°C ~ 150°C | 1A | 10pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 90V 10A TO277A | TO-277, 3-PowerDFN | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-277A (SMPC) | Schottky | 90V | 880mV @ 10A | - | 10µA @ 90V | -55°C ~ 175°C | 10A | 270pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO214AC | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-214AC (SMA) | Standard | 600V | 1.7V @ 1A | 75ns | 10µA @ 600V | -55°C ~ 150°C | 1A | 10pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 90V 10A TO277A | TO-277, 3-PowerDFN | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-277A (SMPC) | Schottky | 90V | 880mV @ 10A | - | 10µA @ 90V | -55°C ~ 175°C | 10A | 270pF @ 4V, 1MHz |