- Manufacture :
- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SC SCHKY 650V 6A TO220ACP | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A | 300pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A (DC) | 300pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 600V 6A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 600V | 1.5V @ 6A | 0ns | 120µA @ 600V | 175°C (Max) | 6A | 260pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 6A TO251 | TO-251-2, IPak | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-251-2 | Standard | 600V | 1.5V @ 6A | 60ns | 100µA @ 600V | -65°C ~ 175°C | 6A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252AA | Standard | 600V | 1.5V @ 6A | 83ns | 100µA @ 600V | -55°C ~ 175°C | 6A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 6A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252AA | Standard | 600V | 1.5V @ 6A | 60ns | 100µA @ 600V | -65°C ~ 175°C | 6A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 6A TO251 | TO-251-2, IPak | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-251-2 | Standard | 600V | 1.5V @ 6A | 60ns | 100µA @ 600V | -65°C ~ 175°C | 6A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252AA | Standard | 600V | 1.5V @ 6A | 83ns | 100µA @ 600V | -55°C ~ 175°C | 6A | - | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A (DC) | 300pF @ 1V, 1MHz |