- Manufacture :
- Package / Case :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.5A 40V SMA-FL | DO-221AC, SMA Flat Leads | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMA-FL | Schottky | 40V | 460mV @ 1.5A | - | 800µA @ 40V | -55°C ~ 150°C | 1.5A | - | |||||
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ON Semiconductor | DIODE SCHOTTKY 40V 1.5A SMB | DO-214AA, SMB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMB | Schottky | 40V | 460mV @ 1.5A | - | 800µA @ 40V | -55°C ~ 125°C | 1.5A | - |