- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | DIODE GEN PURP 600V 4A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 600V | 1.28V @ 4A | 75ns | 10µA @ 600V | -65°C ~ 175°C | 4A | - | ||||
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ON Semiconductor | DIODE GEN PURP 400V 4A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 400V | 1.28V @ 4A | 75ns | 10µA @ 400V | -65°C ~ 175°C | 4A | - | |||||
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ON Semiconductor | DIODE GEN PURP 400V 4A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 400V | 1.28V @ 4A | 75ns | 10µA @ 400V | -65°C ~ 175°C | 4A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 4A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 600V | 1.28V @ 4A | 75ns | 10µA @ 600V | -65°C ~ 175°C | 4A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 4A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 600V | 1.28V @ 4A | 75ns | 10µA @ 600V | -65°C ~ 175°C | 4A | - | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 8A | 0ns | 300µA @ 600V | -55°C ~ 175°C | 8A (DC) | 280pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 4A DO201AD | DO-201AA, DO-27, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 600V | 1.28V @ 4A | 75ns | 10µA @ 600V | -65°C ~ 175°C | 4A | - |