- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 650V 15A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACFP | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A | 550pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 15A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220ACFP | Standard | 600V | 2.8V @ 15A | 50ns | 10µA @ 600V | 150°C (Max) | 15A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 12A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220ACFP | Standard | 600V | 2.8V @ 12A | 45ns | 10µA @ 600V | 150°C (Max) | 12A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220ACFP | Standard | 600V | 2.8V @ 8A | 45ns | 10µA @ 600V | 150°C (Max) | 8A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220ACFP | Standard | 600V | 3V @ 8A | 40ns | 10µA @ 600V | 150°C (Max) | 8A | - | ||||
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ROHM Semiconductor | DIODE GP 600V 10A TO220ACFP | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220ACFP | Standard | 600V | 1.3V @ 10A | 150ns | 10µA @ 600V | 150°C (Max) | 10A | - | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A | 260pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A | 138pF @ 1V, 1MHz | ||||
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Wolfspeed / Cree | DIODE SCHOTTKY 600V 3.5A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 600V | 1.8V @ 2A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 3.5A | 120pF @ 0V, 1MHz |