- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D2PAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D2PAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Stealth™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-263AB | Standard | 1200V | 3.3V @ 8A | 300ns | 100µA @ 1200V | -55°C ~ 150°C | 8A | 30pF @ 10V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-252AA | Standard | 1200V | 2.1V @ 4A | 90ns | 100µA @ 1200V | -65°C ~ 175°C | 4A | - | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV DIE | Die | - | - | Surface Mount | Active | Die | Standard | 1200V | 2.6V @ 15A | - | 1µA @ 1200V | 175°C (Max) | - | - | |||||
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3,576
In-stock
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ON Semiconductor | DIODE GEN PURP 1.2KV DIE | Die | - | Bulk | - | Surface Mount | Active | Die | Standard | 1200V | 2.6V @ 15A | - | 1µA @ 1200V | 175°C (Max) | - | - | |||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO263-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Stealth™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-263AB | Standard | 1200V | 3.3V @ 18A | 300ns | 100µA @ 1200V | -55°C ~ 175°C | 18A | - | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 4A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252AA | Standard | 1200V | 2.1V @ 4A | 90ns | 100µA @ 1200V | -65°C ~ 175°C | 4A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A D-PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-PAK (TO-252AA) | Standard | 1200V | 1.3V @ 8A | 270ns | 100µA @ 1200V | -40°C ~ 150°C | 8A | - | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-252AA | Standard | 1200V | 2.1V @ 4A | 90ns | 100µA @ 1200V | -65°C ~ 175°C | 4A | - | |||||
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STMicroelectronics | DIODE GEN PURP 1.2KV 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | TURBOSWITCH™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DPAK | Standard | 1200V | 2.2V @ 5A | 95ns | 100µA @ 1200V | 150°C (Max) | 5A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Standard | 1200V | 1.3V @ 8A | 270ns | 100µA @ 1200V | -40°C ~ 150°C | 8A | - | ||||
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Littelfuse Inc. | SCHOTTKY DIODE SIC 1200V 10A | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Gen2 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263-2L | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 28A (DC) | 582pF @ 1V, 1MHz | |||||
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Littelfuse Inc. | DIODE SIC SCHOTTKY 1200V 8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Gen2 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252, (D-Pak) | Silicon Carbide Schottky | 1200V | 1.8V @ 8A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 24.5A (DC) | 454pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 4A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252AA | Standard | 1200V | 2.1V @ 4A | 90ns | 100µA @ 1200V | -65°C ~ 175°C | 4A | - |