- Manufacture :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Reverse Recovery Time (trr) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE GEN PURP 200V 700MA PMDU | SOD-123F | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | PMDU | Standard | 200V | 850mV @ 700mA | 25ns | 10µA @ 200V | 150°C (Max) | 700mA | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 100V SMD | 2-SMD, Flat Lead | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TUMD2M | Schottky | 100V | 850mV @ 700mA | 4.35ns | 200nA @ 100V | 150°C (Max) | 700mA | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 100V 700MA TUMD2M | 2-SMD, Flat Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TUMD2M | Schottky | 100V | 850mV @ 700mA | - | 200nA @ 100V | 150°C (Max) | 700mA | - | |||||
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ON Semiconductor | 650V 6A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 6A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 6A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz |