- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Reverse Recovery Time (trr) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | DIODE GEN PURP 1.5KV 14A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 1500V | 2.4V @ 14A | 120ns | 20µA @ 1500V | -65°C ~ 150°C | 14A | - | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2 | Standard | 600V | 1.7V @ 8A | 120ns | 10µA @ 600V | -65°C ~ 150°C | 8A | - | |||||
|
ON Semiconductor | 650V 16A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 463pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 650V 8A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8A (DC) | 463pF @ 1V, 100kHz | |||||
|
ON Semiconductor | DIODE GEN PURP 150V 200MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Active | DO-35 | Standard | 150V | 650mV @ 1mA | 120ns | 100nA @ 150V | 175°C (Max) | 200mA | - | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220FP | TO-220-2 Full Pack | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220FP | Standard | 600V | 1.7V @ 8A | 120ns | 10µA @ 600V | -65°C ~ 150°C | 8A | - | |||||
|
ON Semiconductor | DIODE GEN PURP 150V 200MA DO35 | DO-204AH, DO-35, Axial | - | Small Signal =< 200mA (Io), Any Speed | Through Hole | Active | DO-35 | Standard | 150V | 650mV @ 1mA | 120ns | 100nA @ 150V | 175°C (Max) | 200mA | - | ||||||
|
ON Semiconductor | DIODE SCHOTTKY 650V 13A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 463pF @ 1V, 100kHz | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220F-2L | Standard | 600V | 2.3V @ 10A | 120ns | 100µA @ 600V | -65°C ~ 150°C | 10A | - | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Standard | 600V | 1.7V @ 8A | 120ns | 10µA @ 600V | -65°C ~ 150°C | 8A | - | |||||
|
ON Semiconductor | DIODE GEN PURP 1.5KV 14A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 1500V | 2.4V @ 14A | 120ns | 20µA @ 1500V | -65°C ~ 150°C | 14A | - | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220-2 | TO-220-2 | SWITCHMODE™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2 | Standard | 600V | 1.7V @ 8A | 120ns | 10µA @ 600V | -65°C ~ 150°C | 8A | - |