- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Central Semiconductor Corp | DIODE GEN PURP 600V 5A SMC | DO-214AB, SMC | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMC | Standard | 600V | 1.7V @ 5A | 22ns | 1µA @ 600V | -65°C ~ 175°C | 5A | 17pF @ 4V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GEN PURP 600V 5A SMC | DO-214AB, SMC | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMC | Standard | 600V | 1.7V @ 5A | 22ns | 1µA @ 600V | -65°C ~ 175°C | 5A | 17pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Stealth™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-263AB | Standard | 600V | 2.4V @ 4A | 22ns | 100µA @ 600V | -55°C ~ 175°C | 4A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220AC | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 2.4V @ 4A | 22ns | 100µA @ 600V | -55°C ~ 175°C | 4A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220AC | TO-220-2 Full Pack | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220F-2L | Standard | 600V | 2.4V @ 4A | 22ns | 100µA @ 600V | -55°C ~ 150°C | 4A | - | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 100µA @ 600V | -55°C ~ 135°C | 6A (DC) | 243pF @ 1V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolSiC™ | No Recovery Time > 500mA (Io) | Surface Mount | Obsolete | D²PAK | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Stealth™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-263AB | Standard | 600V | 2.4V @ 4A | 22ns | 100µA @ 600V | -55°C ~ 175°C | 4A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220AC | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 2.4V @ 4A | 22ns | 100µA @ 600V | -55°C ~ 175°C | 4A | - | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220AB | TO-220-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | P-TO220AB | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 600V | 1.65V @ 6A | 0ns | 20µA @ 600V | -55°C ~ 175°C | 6A (DC) | 316pF @ 1V, 1MHz |