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Packaging :
Supplier Device Package :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Current - Reverse Leakage @ Vr :
Operating Temperature - Junction :
Current - Average Rectified (Io) :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
BA5918FP
Per Unit
$5.3000
RFQ
ROHM Semiconductor SHORTER RECOVERY TIME, ENABLING TO-220-2 - - No Recovery Time > 500mA (Io) Through Hole Active TO-220ACP Silicon Carbide Schottky 650V 1.5V @ 8A 0ns 40µA @ 650V 175°C (Max) 8A (DC) 400pF @ 1V, 1MHz
BA5917FP-E2
Per Unit
$4.5000
RFQ
ROHM Semiconductor DIODE SC SCHKY 650V 8A TO220ACP TO-220-2 - Tube No Recovery Time > 500mA (Io) Through Hole Active - Silicon Carbide Schottky 650V 1.5V @ 8A 0ns 40µA @ 650V 175°C (Max) 8A (DC) 400pF @ 1V, 1MHz
GDP06S060D
RFQ
Global Power Technologies Group DIODE SCHOTTKY 600V 6A TO263-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Amp+™ Tube No Recovery Time > 500mA (Io) Surface Mount Obsolete TO-263-2 Silicon Carbide Schottky 600V 1.7V @ 6A 0ns 100µA @ 600V -55°C ~ 135°C 6A 243pF @ 1V, 1MHz
GDP06S060A
RFQ
Global Power Technologies Group DIODE SCHOTTKY 600V 6A TO220-2 TO-220-2 Amp+™ Tube No Recovery Time > 500mA (Io) Through Hole Obsolete TO-220-2 Silicon Carbide Schottky 600V 1.7V @ 6A 0ns 100µA @ 600V -55°C ~ 135°C 6A (DC) 243pF @ 1V, 1MHz
SCS308AHGC9
Per Unit
$5.3000
RFQ
ROHM Semiconductor SHORTER RECOVERY TIME, ENABLING TO-220-2 - - No Recovery Time > 500mA (Io) Through Hole Active TO-220ACP Silicon Carbide Schottky 650V 1.5V @ 8A 0ns 40µA @ 650V 175°C (Max) 8A (DC) 400pF @ 1V, 1MHz
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