- Manufacture :
- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
ROHM Semiconductor | DIODE SC SCHKY 650V 6A TO220ACP | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A | 300pF @ 1V, 1MHz | ||||
|
|
ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A (DC) | 300pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 600V 6A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 600V | 1.5V @ 6A | 0ns | 120µA @ 600V | 175°C (Max) | 6A | 260pF @ 1V, 1MHz | ||||
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 40µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A (DC) | 300pF @ 1V, 1MHz |