- Package / Case :
- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 2V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 520pF @ 1V, 1MHz | ||||
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.7V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 500pF @ 1V, 1MHz | ||||
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.7V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 500pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 30A TO247 | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247 | Standard | 1200V | 2.1V @ 30A | 150ns | 250µA @ 1200V | -65°C ~ 175°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 30A TO247 | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1200V | 3.2V @ 30A | 85ns | 250µA @ 1200V | -65°C ~ 175°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 30A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 1200V | 3.2V @ 30A | 85ns | 250µA @ 1200V | -65°C ~ 175°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 30A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Standard | 1200V | 3.2V @ 30A | 85ns | 250µA @ 1200V | -65°C ~ 175°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 75A TO247 | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1200V | 3.2V @ 75A | 100ns | 250µA @ 1200V | -65°C ~ 175°C | 75A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 30A TO247 | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247 | Standard | 1200V | 2.1V @ 30A | 150ns | 250µA @ 1200V | -65°C ~ 175°C | 30A | - | ||||
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Wolfspeed / Cree | ZRECTM 10A 1200V SIC SCHOTTKY DI | TO-247-2 | Z-Rec® | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 31.5A (DC) | 754pF @ 0V, 1MHz |