- Manufacture :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 300V 2A SJP | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 300V | 1.3V @ 2A | 30ns | 50µA @ 300V | -40°C ~ 150°C | 2A | - | ||||||
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Sanken | DIODE GEN PURP 300V 2A SJP | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 300V | 1.3V @ 2A | 30ns | 50µA @ 300V | -40°C ~ 150°C | 2A | - | ||||||
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Sanken | DIODE GEN PURP 300V 2A 2SMD | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 300V | 1.3V @ 2A | 30ns | 50µA @ 300V | -40°C ~ 150°C | 2A | - | ||||||
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Sanken | DIODE GEN PURP 300V 2A SJP | 2-SMD, J-Lead | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SJP | Standard | 300V | 1.3V @ 2A | 30ns | 50µA @ 300V | -40°C ~ 150°C | 2A | - | ||||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz |