- Manufacture :
- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Sanken | DIODE SCHOTTKY 40V 10A TO220F-2L | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Schottky | 40V | 550mV @ 10A | - | 10mA @ 40V | -40°C ~ 150°C | 10A | - | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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Sanken | DIODE SCHOTTKY 40V 10A TO220F-2L | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Schottky | 40V | 550mV @ 10A | - | 10mA @ 40V | -40°C ~ 150°C | 10A | - |