- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.65V @ 5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 4.3A (DC) | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 15A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 14.6A (DC) | 1107pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 3A SMB | DO-214AA, SMB | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMB | Standard | 600V | 1.25V @ 3A | 75ns | 3µA @ 600V | -65°C ~ 175°C | 3A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 3A SMB | DO-214AA, SMB | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMB | Standard | 600V | 1.25V @ 3A | 75ns | 3µA @ 600V | -65°C ~ 175°C | 3A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 3A SMB | DO-214AA, SMB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMB | Standard | 600V | 1.25V @ 3A | 75ns | 3µA @ 600V | -65°C ~ 175°C | 3A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-PAK (TO-252AA) | Standard | 600V | 1.8V @ 4A | 42ns | 3µA @ 600V | -55°C ~ 150°C | 4A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-Pak | Standard | 600V | 1.8V @ 4A | 42ns | 3µA @ 600V | -55°C ~ 150°C | 4A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFRED® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Standard | 600V | 1.8V @ 4A | 42ns | 3µA @ 600V | -55°C ~ 150°C | 4A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Standard | 600V | 1.8V @ 4A | 42ns | 3µA @ 600V | -55°C ~ 150°C | 4A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO221AC | DO-221AC, SMA Flat Leads | Automotive, AEC-Q101, FRED Pt® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DO-221AC (SlimSMA) | Standard | 600V | 1.35V @ 3A | 50ns | 3µA @ 600V | -55°C ~ 175°C | 3A | - |