- Manufacture :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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SMC Diode Solutions | DIODE GEN PURP 600V 4A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 1.55V @ 4A | 50ns | 3µA @ 600V | -55°C ~ 150°C | 4A | - | ||||
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SMC Diode Solutions | DIODE GEN PURP 600V 4A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 1.55V @ 4A | 50ns | 3µA @ 600V | -55°C ~ 150°C | 4A | - | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 650V 30A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.65V @ 10A | - | 100µA @ 650V | -55°C ~ 175°C | 30A (DC) | 527pF @ 1V, 1MHz |