- Series :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
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29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 10A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D²PAK | Standard | 1200V | 3.5V @ 10A | 100ns | 10µA @ 1200V | -65°C ~ 150°C | 10A | - | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 1200V | 3.5V @ 10A | 100ns | 10µA @ 1200V | -65°C ~ 150°C | 10A | - | ||||
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STMicroelectronics | DIODE GEN PURP 1.2KV 2A DO201AD | DO-201AD, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 1200V | 1.75V @ 2A | 75ns | 10µA @ 1200V | 175°C (Max) | 2A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 1200V | 3.5V @ 10A | 100ns | 10µA @ 1200V | -65°C ~ 150°C | 10A | - | ||||
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STMicroelectronics | DIODE GEN PURP 1.2KV 1A SMB | DO-214AA, SMB | TURBOSWITCH™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | SMB | Standard | 1200V | 1.65V @ 1A | 115ns | 10µA @ 1200V | 125°C (Max) | 1A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A TO247AC | TO-247-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 1200V | 3.3V @ 8A | 95ns | 10µA @ 1200V | -55°C ~ 150°C | 8A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A TO220AC | TO-220-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3.3V @ 8A | 95ns | 10µA @ 1200V | -55°C ~ 150°C | 8A | - | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 5A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Discontinued at Digi-Key | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 5A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 317pF @ 1V, 1MHz |