- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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STMicroelectronics | DIODE GEN PURP 1.2KV 2A SMC | DO-214AB, SMC | TURBOSWITCH™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | SMC | Standard | 1200V | 1.65V @ 2A | 115ns | 20µA @ 1200V | 125°C (Max) | 2A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Standard | 1200V | 3V @ 16A | 135ns | 20µA @ 1200V | -55°C ~ 150°C | 16A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A TO247AC | TO-247-2 | HEXFRED® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC Modified | Standard | 1200V | 3V @ 16A | 135ns | 20µA @ 1200V | -55°C ~ 150°C | 16A | - | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 24A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 8A | 0ns | 20µA @ 1200V | -50°C ~ 175°C | 24A (DC) | 508pF @ 1V, 1MHz | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 175°C | 10A | 635pF @ 1V, 1MHz | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO247-2 | TO-247-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 175°C | 10A | 635pF @ 1V, 1MHz |