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1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 1200V | 1.75V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 325pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 5A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 270pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 270pF @ 1V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D2PAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D2PAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Stealth™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-263AB | Standard | 1200V | 3.3V @ 8A | 300ns | 100µA @ 1200V | -55°C ~ 150°C | 8A | 30pF @ 10V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO220AC | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3.3V @ 18A | 70ns | 100µA @ 1200V | -55°C ~ 150°C | 18A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-252AA | Standard | 1200V | 2.1V @ 4A | 90ns | 100µA @ 1200V | -65°C ~ 175°C | 4A | - | |||||
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2,445
In-stock
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 1200V | 3.3V @ 8A | 300ns | 100µA @ 1200V | -55°C ~ 150°C | 8A | 30pF @ 10V, 1MHz | |||
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Standard | 1200V | 3.2V @ 8A | 70ns | 100µA @ 1200V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 15A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Standard | 1200V | 3.2V @ 15A | 75ns | 100µA @ 1200V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO247 | TO-247-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1200V | 3.3V @ 18A | 70ns | 100µA @ 1200V | -55°C ~ 150°C | 18A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 1200V | 3.2V @ 8A | 70ns | 100µA @ 1200V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 15A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 1200V | 3.2V @ 15A | 75ns | 100µA @ 1200V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO263-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Stealth™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-263AB | Standard | 1200V | 3.3V @ 18A | 300ns | 100µA @ 1200V | -55°C ~ 175°C | 18A | - | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 30A TO247 | TO-247-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1200V | 3.3V @ 30A | 100ns | 100µA @ 1200V | -55°C ~ 150°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 4A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252AA | Standard | 1200V | 2.1V @ 4A | 90ns | 100µA @ 1200V | -65°C ~ 175°C | 4A | - | |||||
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WeEn Semiconductors | BYC15-1200PQ/TO-220AC/STANDARD M | TO-220-2 | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1200V | 3.2V @ 15A | 61ns | 100µA @ 1200V | 175°C (Max) | 15A | - | ||||
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WeEn Semiconductors | BYC8-1200PQ/TO-220AC/STANDARD MA | TO-220-2 | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1200V | 3.2V @ 8A | 55ns | 100µA @ 1200V | 175°C (Max) | 8A | - | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 8A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.7V @ 8A | 0ns | 100µA @ 1200V | -55°C ~ 135°C | 8A | 477pF @ 1V, 1MHz | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A D-PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-PAK (TO-252AA) | Standard | 1200V | 1.3V @ 8A | 270ns | 100µA @ 1200V | -40°C ~ 150°C | 8A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 60A TO247AC | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC | Standard | 1200V | 1.4V @ 60A | 480ns | 100µA @ 1200V | -40°C ~ 150°C | 60A | - | ||||
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Infineon Technologies | DIODE GEN PURP 1.2KV 11.2A TO220 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Standard | 1200V | 2.15V @ 4A | 115ns | 100µA @ 1200V | -55°C ~ 150°C | 11.2A (DC) | - | ||||
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Powerex Inc. | DIODE GEN PURP 1.2KV 25A TO264-3 | TO-264-3, TO-264AA | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 1200V | 4V @ 100A | 300ns | 100µA @ 1200V | -40°C ~ 150°C | 25A | - |