- Series :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 150V 1A SMA | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMA (DO-214AC) | Standard | 150V | 920mV @ 1A | 15ns | 5µA @ 150V | -55°C ~ 150°C | 1A | 7pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 600V 1A SOD123F | SOD-123F | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SOD-123F | Standard | 600V | 1.7V @ 1A | 35ns | 500nA @ 600V | -55°C ~ 150°C | 1A | 7pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 100V 1A SMA | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMA (DO-214AC) | Standard | 100V | 920mV @ 1A | 15ns | 5µA @ 100V | -55°C ~ 150°C | 1A | 7pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 50V 1A SMA | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMA (DO-214AC) | Standard | 50V | 920mV @ 1A | 15ns | 5µA @ 50V | -55°C ~ 150°C | 1A | 7pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 200V 1A SMA | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMA (DO-214AC) | Standard | 200V | 920mV @ 1A | 15ns | 5µA @ 200V | -55°C ~ 150°C | 1A | 7pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE | SOD-128 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SOD-128 | Standard | 800V | 1.3V @ 1A | 500ns | 5µA @ 800V | -55°C ~ 150°C | 1A | 7pF @ 4V, 1MHz |