- Manufacture :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 1200V | 1.75V @ 20A | 0ns | 400µA @ 1200V | 175°C (Max) | 20A | 1300pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 730pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 60µA @ 650V | 175°C (Max) | 12A (DC) | 600pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SILICON 650V 20A TO247 | TO-247-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 730pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 600V 20A TO220AC | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 600V | 1.7V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 860pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO220FM | TO-220-2 Full Pack | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FM | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 730pF @ 1V, 1MHz | ||||
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STMicroelectronics | DIODE GEN PURP 400V 20A DO247 | DO-247-2 (Straight Leads) | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-247 | Standard | 400V | 1.7V @ 20A | 45ns | 20µA @ 400V | 175°C (Max) | 20A | - | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 60µA @ 650V | 175°C (Max) | 12A (DC) | 600pF @ 1V, 1MHz |