- Package / Case :
- Packaging :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 600V 3A AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 600V | 950mV @ 3A | - | 10µA @ 600V | -40°C ~ 150°C | 3A | - | ||||
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Sanken | DIODE GEN PURP 400V 3A AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 400V | 950mV @ 3A | - | 10µA @ 400V | -40°C ~ 150°C | 3A | - | ||||
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Sanken | DIODE GEN PURP 200V 3A AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 200V | 950mV @ 3A | - | 10µA @ 200V | -40°C ~ 150°C | 3A | - | ||||
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Sanken | DIODE GEN PURP 100V 3A AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 100V | 950mV @ 3A | - | 10µA @ 100V | -40°C ~ 150°C | 3A | - | ||||
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ON Semiconductor | DIODE GEN PURP 50V 3A DO201AD | DO-201AD, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 50V | 950mV @ 3A | 50ns | 5µA @ 50V | -65°C ~ 150°C | 3A | 95pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 200V 3A DO201AD | DO-201AD, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 200V | 950mV @ 3A | 50ns | 5µA @ 200V | -65°C ~ 150°C | 3A | 95pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 150V 3A DO201AD | DO-201AD, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 150V | 950mV @ 3A | 50ns | 5µA @ 150V | -65°C ~ 150°C | 3A | 95pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 100V 3A DO201AD | DO-201AD, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 100V | 950mV @ 3A | 50ns | 5µA @ 100V | -65°C ~ 150°C | 3A | 95pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 15V 19A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Schottky | 15V | 360mV @ 19A | - | 1.5mA @ 15V | -55°C ~ 125°C | 19A | - | ||||
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STMicroelectronics | DIODE GEN PURP 200V 3A DO201AD | DO-201AD, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 200V | 950mV @ 3A | 35ns | 3µA @ 200V | 175°C (Max) | 3A | - |