- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
54 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
Semtech Corporation | DIODE GEN PURP 5KV 2.5A | Module | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 5000V | 6V @ 3A | 2µs | 1µA @ 5000V | -55°C ~ 150°C | 2.5A | - | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 5KV 500MA AXIAL | Axial | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 5000V | 5V @ 1A | 5µs | 1µA @ 5000V | -55°C ~ 150°C | 500mA | - | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 5KV 1A MODULE | Module | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 5000V | 14.4V @ 1A | 150ns | 1µA @ 5000V | -55°C ~ 150°C | 1A | - | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 5KV 2.5A MODULE | Module | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 5000V | 6V @ 3A | 2µs | 1µA @ 5000V | -55°C ~ 150°C | 2.5A | - | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 5KV 500MA AXIAL | Axial | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 5000V | 5.75V @ 500mA | 150ns | 1µA @ 5000V | -55°C ~ 150°C | 500mA | - | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 5KV 500MA AXIAL | Axial | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 5000V | 5.75V @ 500mA | 150ns | 1µA @ 5000V | -55°C ~ 150°C | 500mA | - | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 5KV 500MA AXIAL | Axial | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 5000V | 5V @ 1A | 5µs | 1µA @ 5000V | -55°C ~ 150°C | 500mA | - | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 5KV 300MA AXIAL | Axial | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 5000V | 10V @ 100mA | 2.5µs | 1µA @ 5000V | -65°C ~ 175°C | 300mA | 3.2pF @ 5V, 1MHz | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 5KV 100MA AXIAL | Axial | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 5000V | 8V @ 50mA | 300ns | 1µA @ 5000V | -65°C ~ 175°C | 100mA | 2pF @ 5V, 1MHz | ||||
|
|
|
Semtech Corporation | DIODE GEN PURP 5KV 92MA AXIAL | Axial | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 5000V | 12.5V @ 25mA | 250ns | 500nA @ 5000V | - | 92mA | 2pF @ 50V, 1KHz | ||||
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
6,287
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | |||
|
|
|
2,737
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz |