- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.1V @ 40V (64)
- 1.2V @ 3A (20)
- 1.34V @ 10A (14)
- 1.39V @ 750mA (14)
- 1.3V @ 1A (16)
- 1.3V @ 2.5A (14)
- 1.3V @ 3A (8)
- 1.3V @ 40V (158)
- 1.5V @ 1A (14)
- 1.7V @ 1A (6)
- 1.7V @ 40V (188)
- 1V @ 1A (32)
- 1V @ 40V (184)
- 340mV @ 9A (4)
- 360mV @ 19A (2)
- 410mV @ 19A (2)
- 450mV @ 1A (8)
- 475mV @ 3A (8)
- 500mV @ 3A (8)
- 500mV @ 65A (2)
- 520mV @ 3A (4)
- 525mV @ 3A (8)
- 550mV @ 1A (8)
- 600mV @ 1A (8)
- 650mV @ 5A (4)
- 700mV @ 1A (8)
- 720mV @ 3A (16)
- 850mV @ 1A (16)
- 850mV @ 2A (8)
- 850mV @ 3A (16)
- 950mV @ 40V (190)
- 950mV @ 6A (124)
- Reverse Recovery Time (trr) :
- Current - Reverse Leakage @ Vr :
-
- 1.5mA @ 15V (2)
- 10mA @ 15V (2)
- 10µA @ 1000V (18)
- 10µA @ 100V (18)
- 10µA @ 200V (16)
- 10µA @ 400V (18)
- 10µA @ 50V (18)
- 10µA @ 600V (18)
- 10µA @ 800V (18)
- 18mA @ 15V (2)
- 1mA @ 100V (16)
- 1mA @ 20V (8)
- 1mA @ 30V (8)
- 1mA @ 40V (16)
- 1mA @ 50V (8)
- 1mA @ 60V (8)
- 1mA @ 80V (8)
- 500µA @ 100V (8)
- 500µA @ 20V (8)
- 500µA @ 30V (8)
- 500µA @ 40V (8)
- 500µA @ 60V (8)
- 500µA @ 80V (8)
- 5µA @ 1000V (10)
- 5µA @ 100V (10)
- 5µA @ 200V (12)
- 5µA @ 300V (16)
- 5µA @ 400V (18)
- 5µA @ 50V (8)
- 5µA @ 600V (6)
- 5µA @ 650V (56)
- 5µA @ 800V (2)
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
-
- 100pF @ 4V, 1MHz (64)
- 10pF @ 4V, 1MHz (46)
- 1107pF @ 1V, 1MHz (14)
- 110pF @ 4V, 1MHz (16)
- 1300pF @ 5V, 1MHz (4)
- 150pF @ 4V, 1MHz (40)
- 15pF @ 4V, 1MHz (88)
- 170pF @ 4V, 1MHz (8)
- 17pF @ 4V, 1MHz (8)
- 200pF @ 4V, 1MHz (16)
- 200pF @ 5V, 1MHz (8)
- 20pF @ 4V, 1MHz (252)
- 25pF @ 4V, 1MHz (48)
- 274pF @ 1V, 1MHz (14)
- 30pF @ 4V, 1MHz (90)
- 40pF @ 4V, 1MHz (76)
- 50pF @ 4V, 1MHz (76)
- 60pF @ 4V, 1MHz (62)
- 65pF @ 4V, 1MHz (8)
- 76pF @ 1V, 1MHz (28)
- 80pF @ 4V, 1MHz (48)
588 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SMC Diode Solutions | DIODE SCHOTTKY 40V 5A DO201AD | DO-201AD, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Schottky | 40V | 650mV @ 5A | - | 1mA @ 40V | -55°C ~ 125°C | 5A | 200pF @ 5V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY 40V DO-201AD | DO-201AD, Axial | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Schottky | 40V | 520mV @ 3A | - | 1mA @ 40V | -55°C ~ 125°C | 3A | 200pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 15V 9A DO201AD | DO-201AD, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Schottky | 15V | 340mV @ 9A | - | - | -55°C ~ 125°C | 9A | 1300pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 40V 5A DO201AD | DO-201AD, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Schottky | 40V | 650mV @ 5A | - | 1mA @ 40V | -55°C ~ 125°C | 5A | 200pF @ 5V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY 40V DO-201AD | DO-201AD, Axial | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Schottky | 40V | 520mV @ 3A | - | 1mA @ 40V | -55°C ~ 125°C | 3A | 200pF @ 5V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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6,287
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | |||
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2,737
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz |