- Manufacture :
- Package / Case :
- Packaging :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
48 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE GEN PURP 400V 1A DO204AL | DO-41 Mini, Axial | - | Tape & Box (TB) | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Standard | 400V | 1.3V @ 800mA | 400ns | 10µA @ 400V | 150°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE GEN PURP 600V 1A DO204AL | DO-41 Mini, Axial | - | Tape & Box (TB) | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Standard | 600V | 1.1V @ 1A | - | 10µA @ 600V | 150°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 90V 1A MSR | DO-41 Mini, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Schottky | 90V | 730mV @ 1A | - | 100µA @ 90V | 150°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 60V 2A MSR | DO-41 Mini, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Schottky | 60V | 580mV @ 2A | - | 100µA @ 60V | 150°C (Max) | 2A | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 60V 1A MSR | DO-41 Mini, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Schottky | 60V | 550mV @ 1A | - | 50µA @ 60V | 150°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 40V 1A MSR | DO-41 Mini, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Schottky | 40V | 510mV @ 1A | - | 30µA @ 40V | 150°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 30V 1A MSR | DO-41 Mini, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Schottky | 30V | 480mV @ 1A | - | 50µA @ 30V | 150°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE GEN PURP 400V 1A DO41 | DO-41 Mini, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Standard | 400V | 1.1V @ 1A | - | 10µA @ 400V | 150°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE GEN PURP 200V 1A MSR | DO-41 Mini, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Standard | 200V | 870mV @ 1A | 25ns | 10µA @ 200V | 150°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE GEN PURP 400V 1A MSR | DO-41 Mini, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Standard | 400V | 1.3V @ 800mA | 400ns | 10µA @ 400V | 150°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE GEN PURP 600V 1A MSR | DO-41 Mini, Axial | - | Tape & Box (TB) | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Standard | 600V | 1.1V @ 1A | - | 10µA @ 600V | 150°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE GEN PURP 400V 1A MSR | DO-41 Mini, Axial | - | Tape & Box (TB) | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Standard | 400V | 1.1V @ 1A | - | 10µA @ 400V | 150°C (Max) | 1A | - | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
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6,287
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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2,737
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz |