- Manufacture :
- Package / Case :
- Mounting Type :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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SMC Diode Solutions | DIODE GPP 200V 6A R-6 | R6, Axial | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | R-6 | Standard | 200V | 1.3V @ 6A | 150ns | 10µA @ 140V | -65°C ~ 150°C | 6A | 150pF @ 4V, 1MHz | ||||
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SMC Diode Solutions | DIODE GPP 200V 6A R-6 | R6, Axial | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | R-6 | Standard | 200V | 1.3V @ 6A | 150ns | 10µA @ 140V | -65°C ~ 150°C | 6A | 150pF @ 4V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GP 100V 200MA DIE 1=400 | Die | - | Small Signal =< 200mA (Io), Any Speed | Surface Mount | Active | Die | Standard | 100V | 1V @ 10mA | 4ns | 25nA @ 20V | -65°C ~ 150°C | 200mA (DC) | 4pF @ 0V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GP GPP 1A CHIP FORM 1=400 | Die | - | Tray | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | Die | Standard | 600V | 1.1V @ 1A | - | 5µA @ 600V | -65°C ~ 150°C | 1A | - | ||||
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Central Semiconductor Corp | DIODE GEN PURP 600V 1A DIE 1=400 | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Standard | 600V | 1.3V @ 1A | 250ns | 5µA @ 600V | -65°C ~ 150°C | 1A | - | ||||
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Central Semiconductor Corp | DIODE GPP ULT FAST 1A CHIP 1=400 | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Standard | 600V | 1.4V @ 1A | 75ns | 5µA @ 600V | -65°C ~ 150°C | 1A | - | ||||
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Central Semiconductor Corp | DIODE SCHOTTKY 20V 1A DIE 1=400 | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Schottky | 20V | 450mV @ 1A | - | 1mA @ 20V | -65°C ~ 150°C | 1A | - | ||||
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Central Semiconductor Corp | DIODE SCHOTTKY 20V 1A DIE 1=20 | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Schottky | 20V | 450mV @ 1A | - | 1mA @ 20V | -65°C ~ 150°C | 1A | - | ||||
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Central Semiconductor Corp | DIODE GP 100V 200MA DIE 1=20 | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Standard | 100V | 1V @ 10mA | 4ns | 25nA @ 20V | -65°C ~ 150°C | 200mA (DC) | 4pF @ 0V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GP 600V 1A 1=20PCS | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Standard | 600V | 1.1V @ 1A | - | 5µA @ 600V | -65°C ~ 150°C | 1A | - | ||||
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Central Semiconductor Corp | DIODE GP 600V 1A 1=20PCS | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Standard | 600V | 1.3V @ 1A | 250ns | 5µA @ 600V | -65°C ~ 150°C | 1A | - | ||||
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Central Semiconductor Corp | DIODE GP 600V 1A 1=20PCS | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Standard | 600V | 1.4V @ 1A | 75ns | 5µA @ 600V | -65°C ~ 150°C | 1A | - |