- Manufacture :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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SMC Diode Solutions | DIODE SCHOTTKY 200V 180A PRM1-1 | HALF-PAK | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Chassis Mount | Active | PRM1-1 (Half Pak Module) | Schottky | 200V | 1.12V @ 180A | - | 4.5mA @ 200V | -55°C ~ 175°C | 180A | 2700pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 200V 180A PRM1-1 | HALF-PAK | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Chassis Mount | Active | PRM1-1 (Half Pak Module) | Schottky | 200V | 1.12V @ 180A | - | 4.5mA @ 200V | -55°C ~ 175°C | 180A | 2700pF @ 5V, 1MHz | ||||
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ON Semiconductor | 650V 8A SIC SBD | TO-220-2 Full Pack | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 8A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | 1200V 8A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252, (D-Pak) | Silicon Carbide Schottky | 1200V | 1.75V @ 8A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 22.5A (DC) | 538pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 8A TO220-2 | TO-220-2 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 8A | - | 200µA @ 1200V | -55°C ~ 175°C | 8A (DC) | 538pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 13A TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 463pF @ 1V, 100kHz |